静态随机存取存储器VTI516NF08VM

静态随机存取存储器VTI516NF08VMSRAM不需要刷新电路即能保存它内部存储的数据。而DRAM（DynamicRandomAccessMemory)每隔一段时间，要刷新充电一次，否则内部的数据即会消失，因此SRAM具有较高的性能，功耗较小，但是SRAM也有它的缺点，即它的集成度较低，相同容量的DRAM内存可以设计为较小的体积，但是SRAM却需要很大的体积。同样面积的硅片可以做出更大容量的DRAM，因此SRAM显得更贵。DensityOrg.Temp.Vcc(V)Speed(ns)PackagePackingStatusP/N4Mbit512Kx8Industrial3.38/1036BGATrayMPVTI504NF08NM4Mbit512Kx8Industrial5.01044TSOP2TrayMPVTI504HF08VM4Mbit512Kx8Industrial5.01036BGATrayMPVTI504HF08NM4Mbit256Kx16Industrial1.88/10/1244TSOP2TrayMPVTI504LF16VM4Mbit256Kx16Industrial1.88/10/1248BGATrayMPVTI504LF16LM4Mbit256Kx16Industrial3.38/1044TSOP2TrayMPVTI504NF16VM4Mbit256Kx16Industrial3.38/1048BGATrayMPVTI504NF16LM4Mbit256Kx16Industrial5.01044TSOP2TrayMPVTI504HF16VM4Mbit256Kx16Industrial5.01048BGATrayMPVTI504HF16LM8Mbit1Mx8Industrial1.88/10/1244TSOP2TrayMPVTI508LF08VM8Mbit1Mx8Industrial1.88/10/1248BGATrayMPVTI508LF08LM8Mbit1Mx8Industrial3.38/1044TSOP2TrayMPVTI508NF08VM8Mbit1Mx8Industrial3.38/1048BGATrayMPVTI508NF08LM8Mbit1Mx8Industrial5.01044TSOP2TrayMPVTI508HF08VM8Mbit1Mx8Industrial5.01048BGATrayMPVTI508HF08LM8Mbit512Kx16Industrial1.88/10/1244TSOP2TrayMPVTI508LF16VM8Mbit512Kx16Industrial1.88/10/1248BGATrayMPVTI508LF16LM8Mbit512Kx16Industrial3.38/1044TSOP2TrayMPVTI508NF16VM8Mbit512Kx16Industrial3.38/1048BGATrayMPVTI508NF16LM8Mbit512Kx16Industrial5.01044TSOP2TrayMPVTI508HF16VM8Mbit512Kx16Industrial5.01048BGATrayMPVTI508HF16LM16Mbit2Mx8Industrial1.88/10/1244TSOP2TrayMPVTI516LF08VM16Mbit2Mx8Industrial1.88/10/1248BGATrayMPVTI516LF08LM16Mbit2Mx8Industrial3.38/1044TSOP2TrayMPVTI516NF08VM16Mbit2Mx8Industrial3.38/1048BGATrayMPVTI516NF08LM标签：同步sr存储器存储芯片 同步sram存储器存储芯片 深圳市VTI516NF08VM 深圳市VTI516NF08VM厂家
广东 深圳市[同步sram 存储器 存储芯片] 深圳市VTI516NF08VM厂家
静态随机存取存储器VTI516NF08VM